Digital Integrated Circuits: Analysis and Design
Ayers, John E.
Digital Integrated Circuits: Analysis and Design - 2nd ed - Boca Raton CRC Press 2010 - 597p
Introduction Fabrication Semiconductors and p-n Junctions The MOS Transistor MOS Gate Circuits Static CMOS Interconnect Dynamic CMOS Low ower CMOS Bistable Circuits Digital Memories Input/Output and Interface Circuits Appendix - A: List of Symbols Appendix - B: International System of Units Appendix - C: Unit Prefixes Appendix - D: Greek Alphabet Appendix - E: Physical Constants Appendix - F: Properties of Si and Ge at 300 K Appendix - G: Properties of SiO2 at 300 K Appendix - H: Important Equations Appendix - I: Design Rules Appendix - J: p-n Junction Switching Transients Appendix - K: Bipolar and BiCMOS Circuits Appendix - L: Integrated Circuit Package
9781420069877 0.00
Electrical Engineering
621.3815 / AYE
Digital Integrated Circuits: Analysis and Design - 2nd ed - Boca Raton CRC Press 2010 - 597p
Introduction Fabrication Semiconductors and p-n Junctions The MOS Transistor MOS Gate Circuits Static CMOS Interconnect Dynamic CMOS Low ower CMOS Bistable Circuits Digital Memories Input/Output and Interface Circuits Appendix - A: List of Symbols Appendix - B: International System of Units Appendix - C: Unit Prefixes Appendix - D: Greek Alphabet Appendix - E: Physical Constants Appendix - F: Properties of Si and Ge at 300 K Appendix - G: Properties of SiO2 at 300 K Appendix - H: Important Equations Appendix - I: Design Rules Appendix - J: p-n Junction Switching Transients Appendix - K: Bipolar and BiCMOS Circuits Appendix - L: Integrated Circuit Package
9781420069877 0.00
Electrical Engineering
621.3815 / AYE