TY  - BOOK
AU  - Nicollian, E. H.
AU  - Brews, J. R.
TI  - MOS (Metal Oxide Semiconductor): Physics and Technology
SN  - 9780471430797
U1  - 621.38152 
PY  - 2003///
CY  - New York
PB  - John Wiley & Sons, Inc.
KW  - Mechanical Engineering
N1  - Introduction Field Effect Metal Oxide Sillicon Capacitor at Low Frequencies Metal Oxide Sillicon Capacitor at Intermediate and High Frequencies Extraction of Interface Trap Properties from the Conductance Interfacial Nonuniformities Experimental Evidence for Interface Trap Properties Extraction of Interface Trap Properties from the Capacitance Measurement of Sillicon Properties Charges, Barrier Heights and Flatband Voltage Charge Trapping in the Oxide Instrumentation for Measuring Capacitor Characteristics Oxidation of Sillicon Oxidation Kinetics Oxidation of Sillicon Technology Control of Oxide Charges Models of the Interface
ER  -