TY - BOOK AU - Nicollian, E. H. AU - Brews, J. R. TI - MOS (Metal Oxide Semiconductor): Physics and Technology SN - 9780471430797 U1 - 621.38152 PY - 2003/// CY - New York PB - John Wiley & Sons, Inc. KW - Mechanical Engineering N1 - Introduction Field Effect Metal Oxide Sillicon Capacitor at Low Frequencies Metal Oxide Sillicon Capacitor at Intermediate and High Frequencies Extraction of Interface Trap Properties from the Conductance Interfacial Nonuniformities Experimental Evidence for Interface Trap Properties Extraction of Interface Trap Properties from the Capacitance Measurement of Sillicon Properties Charges, Barrier Heights and Flatband Voltage Charge Trapping in the Oxide Instrumentation for Measuring Capacitor Characteristics Oxidation of Sillicon Oxidation Kinetics Oxidation of Sillicon Technology Control of Oxide Charges Models of the Interface ER -