000			01346nam a2200193Ia 4500
008			140223b2009 xxu||||| |||| 00| 0 eng d
020			_a9780470823422 _c0.00
082			_a621.395 _bBHA
100			_aBhattacharyya, A. B.
245			_aCompact Mosfet Models for VLSI Design
260			_aChichester _bJohn Wiley and Sons _c2009
300			_a432p
500			_aSemiconductor Physics Review for MOSFET Modeling Ideal Metal Oxide Semiconductor Capacitor Non-ideal and Non-classical MOS Capacitors Long Channel MOS Transistor The Scaled MOS Transistor Quasistatic, Non-quasistatic, and Noise Models Quantum Phenomena in MOS Transistors Non-classical MOSFET Structures Appendix - A: Expression for Electric Field and Potential Variation in the Semiconductor Space Charge under the Gate Appendix - B: Features of Select Compact MOSFET Models Appendix - C: PSP Two-point Collocation Method Index
600			_aElectronic Engineering
600			_aIntegrated Circuits - Very Large Scale Integration - Design and Construction
600			_aMetal Oxide Semiconductor Field - Effect Transistors - Design and Construction
890			_aUSA
995			_ABHA _B008848 _CECE-PG0 _D4305.00 _E0 _F049 _G4959 _H0 _I0.00 _J6150.00 30% _L20091120 _M01 _UC _W20091126 _XMahajan Book Depot _ZReference
999			_c44929 _d44929