000			01311nam a2200181Ia 4500
008			140223b2010 xxu||||| |||| 00| 0 eng d
020			_a9781420069877 _c0.00
082			_a621.3815 _bAYE
100			_aAyers, John E.
245			_aDigital Integrated Circuits: Analysis and Design
250			_a2nd ed
260			_aBoca Raton _bCRC Press _c2010
300			_a597p
500			_aIntroduction Fabrication Semiconductors and p-n Junctions The MOS Transistor MOS Gate Circuits Static CMOS Interconnect Dynamic CMOS Low ower CMOS Bistable Circuits Digital Memories Input/Output and Interface Circuits Appendix - A: List of Symbols Appendix - B: International System of Units Appendix - C: Unit Prefixes Appendix - D: Greek Alphabet Appendix - E: Physical Constants Appendix - F: Properties of Si and Ge at 300 K Appendix - G: Properties of SiO2 at 300 K Appendix - H: Important Equations Appendix - I: Design Rules Appendix - J: p-n Junction Switching Transients Appendix - K: Bipolar and BiCMOS Circuits Appendix - L: Integrated Circuit Package
600			_aElectrical Engineering
890			_aUSA
995			_AAYE _B009442 _CELE-PG0 _D2015.73 _E0 _F049 _G104472 _H0 _I0.00 _J2975.25 32.25% _L20100721 _M06 _UC _W20110212 _XHimanshu Book Co. _ZReference
999			_c45351 _d45351