| 000 | 01192nam a2200181Ia 4500 | ||
|---|---|---|---|
| 008 | 140223b2002 xxu||||| |||| 00| 0 eng d | ||
| 020 |
_a9780471415411 _c0.00 |
||
| 082 |
_a621.38152 _bBRE |
||
| 100 | _aBrennan, Kevin F. | ||
| 245 | _aTheory of Modern Electronic Semiconductor Devices | ||
| 260 |
_aNew York _bJohn Wiley & Sons, Inc. _c2002 |
||
| 300 | _a448p | ||
| 500 | _aOverview of Semiconductor Devices Trends Semiconductor Heterostructures Heterostructure Field Effect Transistors Heterostructure Bipolar Transistors Transferred Electron Effects, Negative Differential Resistance, and Devices Resonant Tunneling and Devices CMOS: Devices and Future Challenges Beyond CMOS: Future Approaches to Computing Hardware Magnetic Field Effects in Semiconductors Appendix - A: Physical Constants Appendix - B: Bulk Material Parameters Appendix - C: Heterojunction Properties | ||
| 600 | _aElectronic Engineering | ||
| 700 | _aBrown, April S. | ||
| 890 | _aUSA | ||
| 995 |
_ABRE _B004404 _CELE-PG0 _D4945.50 _E0 _F049 _G090148 _H0 _I0.00 _J3313.485 33% _L20060222 _M07 _UC _W20060309 _XHimanshu Book Co. _ZReference |
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| 999 |
_c49060 _d49060 |
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