000 | 01327nam a2200169Ia 4500 | ||
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008 | 140223b2006 xxu||||| |||| 00| 0 eng d | ||
020 |
_a9781402045554 _c0.00 |
||
082 |
_a621.3950287 _bTRA |
||
100 | _aGrabinski, Wladyslaw | ||
245 | _aTransistor Level Modeling for Analog / RF IC Design | ||
260 |
_aNetherlands _bSpringer _c2006 |
||
300 | _a291p | ||
500 | _aIntroduction 2/3-D Process and Device Simulation. An Effective Tool for Better Understanding of Internal Behavior of Semiconductor Structures PSP: An Advanced Surface Potential Based MOSFET Model EKV3.0: An Advanced Charge based MOS Transistor Model. A Design Oriented MOS Transistor Compact Model for Next Generation CMOS Modelling using High Frequency Measurements Empirical FET Models Modeling the SOI MOSFET Nonlinearities: An Empirical Approach Circuit Level RF Modeling and Design On Incorporating Parasitic Quantum Effects in Classical Circuit Simulations Compact Modeling of the MOSFET in VHDL AMS Compact Modeling in Verilog - A. | ||
600 | _aElectronic Engineering | ||
890 | _aNetherland | ||
995 |
_ATRA _B007531 _CECE-PG0 _D4234.68 _E0 _F049 _GIN288 _H0 _I0.00 _J5922.63 28.5% _L20080807 _M03 _UC _W20080814 _XKushal Books _ZReference |
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999 |
_c49137 _d49137 |