MOS (Metal Oxide Semiconductor): Physics and Technology
Nicollian, E. H.
MOS (Metal Oxide Semiconductor): Physics and Technology - New York John Wiley & Sons, Inc. 2003 - 906p
Introduction Field Effect Metal Oxide Sillicon Capacitor at Low Frequencies Metal Oxide Sillicon Capacitor at Intermediate and High Frequencies Extraction of Interface Trap Properties from the Conductance Interfacial Nonuniformities Experimental Evidence for Interface Trap Properties Extraction of Interface Trap Properties from the Capacitance Measurement of Sillicon Properties Charges, Barrier Heights and Flatband Voltage Charge Trapping in the Oxide Instrumentation for Measuring Capacitor Characteristics Oxidation of Sillicon Oxidation Kinetics Oxidation of Sillicon Technology Control of Oxide Charges Models of the Interface
9780471430797 0.00
Mechanical Engineering
621.38152 / NIC
MOS (Metal Oxide Semiconductor): Physics and Technology - New York John Wiley & Sons, Inc. 2003 - 906p
Introduction Field Effect Metal Oxide Sillicon Capacitor at Low Frequencies Metal Oxide Sillicon Capacitor at Intermediate and High Frequencies Extraction of Interface Trap Properties from the Conductance Interfacial Nonuniformities Experimental Evidence for Interface Trap Properties Extraction of Interface Trap Properties from the Capacitance Measurement of Sillicon Properties Charges, Barrier Heights and Flatband Voltage Charge Trapping in the Oxide Instrumentation for Measuring Capacitor Characteristics Oxidation of Sillicon Oxidation Kinetics Oxidation of Sillicon Technology Control of Oxide Charges Models of the Interface
9780471430797 0.00
Mechanical Engineering
621.38152 / NIC