MOS (Metal Oxide Semiconductor): Physics and Technology (Record no. 47660)

MARC details
000 -LEADER
fixed length control field 01315nam a2200181Ia 4500
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 140223b2003 xxu||||| |||| 00| 0 eng d
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 9780471430797
Terms of availability 0.00
082 ## - DEWEY DECIMAL CLASSIFICATION NUMBER
Classification number 621.38152
Item number NIC
100 ## - MAIN ENTRY--PERSONAL NAME
Personal name Nicollian, E. H.
245 ## - TITLE STATEMENT
Title MOS (Metal Oxide Semiconductor): Physics and Technology
260 ## - PUBLICATION, DISTRIBUTION, ETC. (IMPRINT)
Place of publication, distribution, etc. New York
Name of publisher, distributor, etc. John Wiley & Sons, Inc.
Date of publication, distribution, etc. 2003
300 ## - PHYSICAL DESCRIPTION
Extent 906p
500 ## - GENERAL NOTE
General note Introduction Field Effect Metal Oxide Sillicon Capacitor at Low Frequencies Metal Oxide Sillicon Capacitor at Intermediate and High Frequencies Extraction of Interface Trap Properties from the Conductance Interfacial Nonuniformities Experimental Evidence for Interface Trap Properties Extraction of Interface Trap Properties from the Capacitance Measurement of Sillicon Properties Charges, Barrier Heights and Flatband Voltage Charge Trapping in the Oxide Instrumentation for Measuring Capacitor Characteristics Oxidation of Sillicon Oxidation Kinetics Oxidation of Sillicon Technology Control of Oxide Charges Models of the Interface
600 ## - SUBJECT ADDED ENTRY--PERSONAL NAME
Personal name Mechanical Engineering
700 ## - ADDED ENTRY--PERSONAL NAME
Personal name Brews, J. R.
890 ## -
-- USA
995 ## - RECOMMENDATION 995 [LOCAL, UNIMARC FRANCE]
-- NIC
-- 001761
-- ECE-PG0
-- 3775.21
-- 0
-- 049
-- 082087
-- 0
-- 0.00
-- 4719.01 20%
-- 1
-- C
-- 20030711
-- Himanshu Book Co.
-- Reference

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