MOS (Metal Oxide Semiconductor): Physics and Technology
Material type:
- 9780471430797
- 621.38152 NIC
Item type | Current library | Item location | Collection | Call number | Status | Date due | Barcode | Item holds | |
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NIMA Knowledge Centre | 6th Floor Silence Zone | Reference | 621.38152 NIC (Browse shelf(Opens below)) | Not For Loan | T0017141 |
Introduction Field Effect Metal Oxide Sillicon Capacitor at Low Frequencies Metal Oxide Sillicon Capacitor at Intermediate and High Frequencies Extraction of Interface Trap Properties from the Conductance Interfacial Nonuniformities Experimental Evidence for Interface Trap Properties Extraction of Interface Trap Properties from the Capacitance Measurement of Sillicon Properties Charges, Barrier Heights and Flatband Voltage Charge Trapping in the Oxide Instrumentation for Measuring Capacitor Characteristics Oxidation of Sillicon Oxidation Kinetics Oxidation of Sillicon Technology Control of Oxide Charges Models of the Interface
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