MOS (Metal Oxide Semiconductor): Physics and Technology

By:

Nicollian, E. H

Contributor(s):

Brews, J. R

Material type: Text

TextPublication details: New York John Wiley & Sons, Inc. 2003Description: 906pISBN:

9780471430797

Subject(s):

Mechanical Engineering

DDC classification:

621.38152 NIC

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Holdings
Item type	Current library	Item location	Collection	Call number	Status	Date due	Barcode	Item holds
Reference Book	NIMA Knowledge Centre	6th Floor Silence Zone	Reference	621.38152 NIC (Browse shelf(Opens below))	Not For Loan		T0017141

Total holds: 0

Introduction Field Effect Metal Oxide Sillicon Capacitor at Low Frequencies Metal Oxide Sillicon Capacitor at Intermediate and High Frequencies Extraction of Interface Trap Properties from the Conductance Interfacial Nonuniformities Experimental Evidence for Interface Trap Properties Extraction of Interface Trap Properties from the Capacitance Measurement of Sillicon Properties Charges, Barrier Heights and Flatband Voltage Charge Trapping in the Oxide Instrumentation for Measuring Capacitor Characteristics Oxidation of Sillicon Oxidation Kinetics Oxidation of Sillicon Technology Control of Oxide Charges Models of the Interface

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