MOS (Metal Oxide Semiconductor): Physics and Technology

By:

Nicollian, E. H

Contributor(s):

Brews, J. R

Material type: Text

TextPublication details: New York John Wiley & Sons, Inc. 2003Description: 906pISBN:

9780471430797

Subject(s):

Mechanical Engineering

DDC classification:

621.38152 NIC

Tags from this library: No tags from this library for this title. Log in to add tags.

Average rating: 0.0 (0 votes)

Holdings
Item type	Current library	Item location	Collection	Call number	Status	Date due	Barcode	Item holds
Reference Book	NIMA Knowledge Centre	6th Floor Silence Zone	Reference	621.38152 NIC (Browse shelf(Opens below))	Not For Loan		T0017141

Total holds: 0

Browsing Institute of Technology shelves, Collection: Reference Close shelf browser (Hides shelf browser)

Previous					No cover image available			Next
Previous	621.38152 BIN Tradeoffs and Optimization n Analog CMOS Design	621.38152 BRE Theory of Modern Electronic Semiconductor Devices	621.38152 CAM The Science and Engineering of Microelectronic Fabrication	621.38152 NIC MOS (Metal Oxide Semiconductor): Physics and Technology	621.38152 OPT Optoelectronic Device Data	621.38152 PIE Advanced Semiconductor Fundamentals: Modular Series on Solid State Devices Vol - 6	621.38152 ROC The Materials Science of Semiconductors	Next

Introduction Field Effect Metal Oxide Sillicon Capacitor at Low Frequencies Metal Oxide Sillicon Capacitor at Intermediate and High Frequencies Extraction of Interface Trap Properties from the Conductance Interfacial Nonuniformities Experimental Evidence for Interface Trap Properties Extraction of Interface Trap Properties from the Capacitance Measurement of Sillicon Properties Charges, Barrier Heights and Flatband Voltage Charge Trapping in the Oxide Instrumentation for Measuring Capacitor Characteristics Oxidation of Sillicon Oxidation Kinetics Oxidation of Sillicon Technology Control of Oxide Charges Models of the Interface

There are no comments on this title.

to post a comment.